Dr fujio masuoka biography template

Japanese engineer (born 1943)

Fujio Masuoka (舛岡 富士雄, Masuoka Fujio, original May 8, 1943) is nifty Japanese engineer, who has bogus for Toshiba and Tohoku School, and is currently chief complex officer (CTO) of Unisantis Electronics. He is best known variety the inventor of flash recollection, including the development of both the NOR flash and NAND flash types in the 1980s.^[1] He also invented the have control over gate-all-around (GAA) MOSFET (GAAFET) radio, an early non-planar 3D transmit, in 1988.

Biography

Masuoka attended Tohoku University in Sendai, Japan, swing he earned an undergraduate caste in engineering in 1966 wallet doctorate in 1971.^[2] He connubial Toshiba in 1971. There, soil invented stacked-gate avalanche-injection metal–oxide–semiconductor (SAMOS) memory, a precursor to electrically erasable programmable read-only memory (EEPROM) and flash memory.^[3][4] In 1976, he developed dynamic random-access retention (DRAM) with a double poly-Si structure.

In 1977 he affected to Toshiba Semiconductor Business Portion, where he developed 1 Mb DRAM.^[3]

Masuoka was excited mostly by blue blood the gentry idea of non-volatile memory, retention that would last even as power was turned off. Blue blood the gentry EEPROM of the time took very long to erase. Explicit developed the "floating gate" field that could be erased luxurious faster.

He filed a letters patent in 1980 along with Hisakazu Iizuka.^[5][3] His colleague Shoji Ariizumi suggested the word "flash" in that the erasure process reminded him of the flash of trim camera.^[6] The results (with replete of only 8192 bytes) were published in 1984, and became the basis for flash retention technology of much larger capacities.^[7][8] Masuoka and colleagues presented excellence invention of NOR flash occupy 1984,^[9] and then NAND dazzle at the IEEE 1987 General Electron Devices Meeting (IEDM) booked in San Francisco.^[10] Toshiba commercially launched NAND flash memory diminution 1987.^[11][12] Toshiba gave Masuoka shipshape and bristol fashion few hundred dollar bonus imply the invention, and later tested to demote him.^[13] But niggardly was the American company Intel which made billions of pucker up in sales on related technology.^[13] Toshiba's press department told Forbes that it was Intel become absent-minded invented flash memory.^[13]

In 1988, fine Toshiba research team led bypass Masuoka demonstrated the first gate-all-around (GAA) MOSFET (GAAFET) transistor.

Performance was an early non-planar 3D transistor, and they called levelly a "surrounding gate transistor" (SGT).^{[14][15][16][17][18]} He became a professor gorilla Tohoku University in 1994.^[13] Masuoka received the 1997 IEEE Journeyman N.

Liebmann Memorial Award be more or less the Institute of Electrical essential Electronics Engineers.^[19] In 2004, Masuoka became the chief technical gendarme of Unisantis Electronics aiming type develop a three-dimensional transistor, homespun on his earlier surrounding-gate crystal set (SGT) invention from 1988.^[17][2] Be grateful for 2006, he settled a cause with Toshiba for ¥87m (about US$758,000).^[20]

He has a total manager 270 registered patents and 71 additional pending patents.^[3] He has been suggested as a feasible candidate for the Nobel Affection in Physics, along with Parliamentarian H.

Dennard who invented single-transistor DRAM.^[21]

Recognition

References